sot-363 plastic-encapsulate transistors MMDT2907A transistor (pnp) feature complementary npn type available mmdt2222a maximum ratings (t a =25 unless otherwise noted) symbol para m eter v alue units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -600 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 marking: k2f electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v (br)cbo i c = -10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -10ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -10 na collector cut-off current i cex v ce =-30v,v eb( o ff) =-0.5v -50 na emitter cut-off current i ebo v eb =-5v, i c =0 -10 na h fe(1) v ce =-10v, i c = -0.1ma 75 h fe(2) v ce =-10v, i c = -1ma 100 h fe(3) v ce =-10v, i c =-10ma 100 h fe(4) v ce =-10v, i c = -150ma 100 300 dc current gain h fe(5) v ce =-10v, i c =-500ma 50 v ce ( sat)1 i c =-150ma, i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat)2 i c =-500ma, i b =- 50ma -1.6 v v be(sat)1 i c =-150ma, i b =-15ma -1.3 v base-emitter saturation voltage v be(sat)2 i c =-500ma, i b = -50ma -2.6 v transition frequency f t v ce =-20v, i c = -50ma, f = 100mhz 200 mhz output capacitance c ob v cb =-10v, i e = 0, f = 1mhz 8 pf input capacitance c ib v eb =-2v, i c = 0, f = 1mhz 30 pf delay time t d 10 ns rise time t r v cc =-30v,i c =-150ma, i b1 =-15ma 40 ns storage time t s 225 ns fall time t f v cc =-6v, i c =-150ma, i b1 = i b2 = -15ma 60 ns so t -363 1 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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